Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH4)2Cr2O7-HBr-citric acid etching composition-Reference-Cited by-同舟云学术

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Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition

Published:2018-03-28 Issue:1 Volume:25 Page:165-171
ISSN:1027-5495
Container-title:Functional materials
language:
Short-container-title:Funct.Mater.

Author:

Levchenko I.V.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

General Materials Science

Reference10 articles.

1. Electron Technology;Papis-Polakowska;Int J,2005

2. Wet etching of InSb surfaces in aqueous solutions: Controlled oxide formation

3. 4. V.M.Tomashik, Z.F.Tomashik, N.V.Kusiak, Phys. Chem. Solid State, 2, 631 (2001).

4. Dissolution Behavior of Undoped and Sn-Doped InAs in HNO3–HBr–CH3CH(OH)COOH

5. 6. I.O.Shelyuk, Z.F.Tomashik, V.M.Tomashi et al., Issues of Chem. and Chem. Technol., 1, 110 (2011).

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