Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters-Reference-Cited by-同舟云学术

Effect of pulse thermal treatments on the Ni(Ti)–n-21R(6H)-SiC contact parameters

Published:2004-10-21 Issue:3 Volume:7 Page:272-278
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Avdeev S.P.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference30 articles.

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2. 2. A.V. Korlyakov, V.V. Luchinin, P.P. Mal'tsev, Microelectromechanical structures on the basis of silicon carbidealuminum nitride composition // Mikroelektronika, 28(3), pp. 201-212 (1999) (in Russian).

3. 3. V.V. Luchinin, Yu.M. Tairov, A.V. Vasil'ev, The features of material-scientific and technological basis of microsystems // Mikrosistemnaya Tekhnika, No 1, pp. 7-11 (1999) (in Russian).

4. 4. V.I. Volchikhin, A.I. Voyachek, V.V. Smogunov, A model for heterogeneous structures in microsystem engineering // Mikrosistemnaya Tekhnika, No 3, pp. 3-4 (2000) (in Russian).

5. 5. E.H. Rhoderick, Metal semiconductor Contacts, Clarendon Press, Oxford (1978).

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