1. 1. V.N. Tomashik, Z.F. Tomashik, A.V. Lyubchenko, A.V. Fomin, Liquid-phase etching of II-VI semiconductor compounds and physical-chemical processes on the interface // Optoelectron. i Poluprov. Tekhn. 28, p. 3-15 (1994) (in Russian).
2. 2. D.E. Aspnes, H. Arwin, Non-destructive analysis of mercury cadmium telluride Hg1-xCdxTe (x = 0; 0.2; 0.29; 1.0) by spectroscopic ellipsometry // J. Vac. Sci. Technol. A2 (3), p. 1309-1322 (1984).
3. 3. H. Arwin, D.E. Aspnes, Observations of CdxHg1-xTe (x = 0; 0.2; 0.29; 1.0) surface after chemical etching // Ibid. 3 (6), p. 352-358 (1985).
4. 4. H.K. Kuiken, J.J. Kelly, P.H.L. Notten, Etching profiles at resist edges. I. Mathematical models for diffusion-controlled cases // J. Electrochem. Soc. 133 (6), p. 1217-1226 (1986).
5. 5. S.M. Repinskiy, Physical-chemical aspect of the processes that take place on the interface semiconductor-solution // In: Nekot. Problemy Fiz. i Khim. Poverkhn. Poluprovodn., Nauka Publ., Novosibirsk, p. 9-72 (1972).