Calculation of spin-Hamiltonian constants for extended defects (VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC

Author:

Shanina B. D.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. A new spin one defect in cubic SiC.;Bratus';Physica B,2009

2. An EPR study of defects in neutron-irradiated cubic SiC crystals.;Bratus;Mater Sci Forum,2013

3. 3. Isoya J., Umeda T., Mizuochi N., Son N.T., Janzen E., Ohshima T. EPR identification of intrinsic defects in 4H-SiC. physica status solidi (b). 2008. 245, No 7. P. 1298–1314.

4. Defects in high-purity semi-insulating SiC.;Son;Mater Sci Forum,2004

5. 5. Itoh H., Kawasuso A., Ohshima T., Yoshikawa M., Nashiyama I., Tanigawa S., Misawa S., Okumura H., Yoshida S. Intrinsic defects in cubic silicon carbide. physica status solidi (a). 1997. 162. P. 173–198.

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