1/f noise and carrier transport mechanisms in InSb p + -n junctions-Reference-Cited by-同舟云学术

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1/f noise and carrier transport mechanisms in InSb p + -n junctions

Published:2018-12-03 Issue:4 Volume:21 Page:374-379
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron

Author:

Tetyorkin V.V.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. 1. Rogalski A. Infrared Detectors. Gordon and Breach Science Publishers, 2000.

2. InAs infrared photodiodes.;Tetyorkin,2011

3. Tunneling current via dislocations in InAs and InSb infrared photodiodes.;Sukach;SPQEO,2011

4. Carrier transport mechanisms in reverse biased InSb p-n functions.;Sukach;SPQEO,2015

5. Electrical properties of InSb p-n junctions prepared by diffusion methods.;Sukach;SPQEO,2016

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InAs PHOTODIODES (REVIEW. PART IV);Optoèlektronika i poluprovodnikovaâ tehnika;2018-12-15

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