Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Integrated heterostructure device composed of II–VI materials with Hg-based contact layers.;Ren;J Cryst Growth,1994
2. HgSe: Metal or Semiconductor?;Gawlik;Phys Rev Lett,1997
3. Ab initio prediction of conduction band spin splitting in zinc blende semiconductors. Phys. Rev. Lett. 2006. 96. P. 086405 (2006).;Chantis;Erratum,2006
4. Excitation spectra and ground-state properties from density-functional theory for the inverted band-structure systems β-HgS, HgSe, and HgTe.;Delin;Phys Rev B,2002
5. Electronic, vibrational, and thermodynamic properties of metacinnabar β-HgS, HgSe, and HgTe.;Cardona;Phys Rev B,2009
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献