Suppression of short-channel effects in normally-off GaN MOSFETs with deep recessed-gate structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab6b7f/pdf
Reference39 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. Gallium nitride devices for power electronic applications
3. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
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3. Fabrication of Low On‐Resistance and Normally Off AlGaN/GaN Metal Oxide Semiconductor Heterojunction Field‐Effect Transistors with AlGaN Back Barrier by the Selective Area Regrowth Technique;physica status solidi (a);2023-06
4. Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer;Micromachines;2022-05-19
5. Dual Metal Triple-Gate-Dielectric (DM_TGD) Tunnel Field Effect Transistor: A Novel Structure for Future Energy Efficient Device;Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering);2021-11-29
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