Author:
Numasawa Yohichiroh,Machida Hideaki,Ishikawa Masato,Sudoh Hiroshi,Hasegawa Yosiharu,Lee Hyunju,Ohshita Yoshio
Abstract
Abstract
A novel liquid cobalt (Co) precursor, bis (diisopropylbutanamidinate)cobalt (DIPRoBA-Co), is proposed as the liquid Co precursor for metal atomic layer deposition (ALD). This precursor was synthesized and the Co ALD process using the obtained precursor was examined. This precursor is liquid and successfully achieves Co ALD with a liquid precursor instead of a solid one. Transmission electron microscopy observation shows that 5–6 nm thick Co metal film grows on a plasma silicon dioxide substrate step structure by this ALD using an ammonia, hydrogen and DIPRoBA-Co gas system with 80 cycles at 220 °C substrate temperature.
Subject
General Physics and Astronomy,General Engineering