Abstract
Abstract
Aluminum oxide-hydroxide thin films are fabricated by a simple chemical process, dip-dry deposition. The substrate is dipped in the solution and then dried on a heater plate. The dip-dry cycles are repeated to obtain necessary thickness. The deposition solution contains Al2(SO4)3 and NH4OH. To control resistivity of the films, Mg is doped by immersing the samples in a Mg(NO3)2 solution. The resistivity is reduced by the doping, and is about 104 Ωcm in the thickness direction. Thus the deposited films would be useful for interface layers in heterostructures and coating of electrodes in electrochemical systems.
Funder
Japan Society for the Promotion of Science
Subject
General Physics and Astronomy,General Engineering