Fundamental evaluation of orientation and grain size of Cu film in Cu/TaWN/SiO2/Si system

Abstract

Abstract Cu(111) preferential orientation is desired to improve the electromigration resistance in Si-LSI (LSI) and 3D-LSI. In this study, we examine the orientation and grain size of a Cu film in a Cu/TaWN/SiO2/Si system by using a 5 nm thick TaWN alloy film that functions as both a thin diffusion barrier and underlying material that induces preferential Cu(111) orientation. The Cu film with highly-oriented growth of Cu(111) and an average grain size of ∼160 nm was obtained on the as-deposited TaWN (5 nm thick)/SiO2/Si system. The Cu/TaWN/SiO2/Si system tolerates annealing at 700 °C for 60 min without Cu diffusion and/or configurational change.