Author:
Kurimoto Yuji,Kobayashi Daiki,Asou Naoki,Okamoto Tamotsu
Abstract
Abstract
ZnS and CdZnS (a mixed crystal phase of ZnS and CdS) were formed using the open-air CVD method. Cadmium diethyldithiocarbamate (C10H20CdN2S4) and zinc diethyldithiocarbamate (C10H20ZnN2S4) were used as the source materials for CdS and ZnS, respectively. By changing the ratio of source materials, it was found that the bandgap and the lattice constant of the CdZnS film were continuously changing without a miscibility gap. Furthermore, the bandgap of the obtained ZnS films was less than the reported bandgap of ZnS (3.68 eV) due to incorporation of oxygen. X-ray diffraction analysis revealed that the increase of Zn in CdZnS film generated a crystalline disorder. When the substrate temperature was changed from 421 °C to 464 °C, the deposition rate increased fourfold for the CdS and ZnS films. The impact of substrate temperature on the bandgap and lattice constant was found to be less pronounced.
Subject
General Physics and Astronomy,General Engineering
Cited by
2 articles.
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