Abstract
Abstract
Electron beam induced current (EBIC) measurements have been widely used to investigate charge carrier collection in Cu(In,Ga)Se2 solar cells. However, we found that this electron beam irradiation could significantly change the EBIC signal intensity during the measurement. In this study, the charge state variation of the V
Se–V
Cu divacancy proposed by Lany et al. was introduced into the device simulator to explain the phenomenon. In the simulation, the defects take on three different charged states, i.e. positive, neutral, and negative states, where their transitions are affected by the quasi-Fermi level position in the bandgap. The transient response of the EBIC signal was successfully explained by incorporating these complex state defects.
Subject
General Physics and Astronomy,General Engineering