Pentacene memory transistors using ligand-exchanged and energy-level-controlled PbS colloidal nanodots for charge-trapping layers

Abstract

Abstract We fabricated pentacene memory transistors using a monolayer of ligand-exchanged and energy-level-controlled PbS colloidal nanodots (NDs) as charge-trapping layers, and it was demonstrated that the writing and retention times were reduced and increased, respectively. This result is explained with a model that the memory effect is due to the electrons tunneled from the pentacene layer into the PbS NDs when a writing voltage was applied. According to this model, the writing and retention characteristics were improved because of the lowered electron energy levels in the NDs.