Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs

Published:2020-07-27 Issue:8 Volume:59 Page:084002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tokuda Hirokuni,Asubar Joel T.,Kuzuhara Masaaki

Funder

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/aba329/pdf

Reference36 articles.

1. Gallium nitride devices for power electronic applications

2. Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

3. Insulated gate and surface passivation structures for GaN-based power transistors

4. AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation

5. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NH3/N2 plasma treatment on etched AlGaN surface for high-performance p-GaN HEMTs fabrication;Materials Science in Semiconductor Processing;2023-11

2. Monolithic Logic Units based on DCFL Structure on p-GaN platform for GaN ICs;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24

3. Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure;Advanced Materials Interfaces;2023-03-28

4. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review;Micromachines;2022-12-01

5. Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors;Japanese Journal of Applied Physics;2022-11-11

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