Influence of Sb inclusion on morphologies and carrier concentration properties of CTS thin films grown by sulfurization of Cu–Sn precursors
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ac2bd8/pdf
Reference31 articles.
1. A study of ternary Cu2SnS3and Cu3SnS4thin films prepared by sulfurizing stacked metal precursors
2. Growth of Cu2SnS3 thin films by solid reaction under sulphur atmosphere
3. Preparation of Cu2SnS3Thin Films by Sulfurization of Cu/Sn Stacked Precursors
4. Thin film solar cells based on the ternary compound Cu2SnS3
5. Fabrication of Cu2SnS3thin films by sulfurization of evaporated Cu-Sn precursors for solar cells
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical transport properties of Cu2Sn1-Ge S3 films with varying x ratios;Thin Solid Films;2024-08
2. Elucidation of electrical properties of undoped and Sb-induced Cu2SnS3 (CTS) thin films and degradation properties on CTS thin films and solar cells by intentional proton irradiation;Japanese Journal of Applied Physics;2022-06-24
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