Abstract
Abstract
In this work, a Cu/ZnO/ITO resistive random access memory (RRAM) structure in which ZnO films are irradiated with neutral oxygen beams was employed to investigate the effect of neutral oxygen beams as a surface treatment. It was confirmed that the treatment reduced the defect concentration in the sputtered-ZnO film and improved the resistance change characteristics of the device. These results indicate the great potential of neutral oxygen beams in the development of RRAM devices using ZnO films.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
2 articles.
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