Development of an angle detection system for channeling implantation to the c-axis of SiC using birefringence phenomenon

Abstract

Abstract We developed an angle detection system for channeling ion implantation in 4H-SiC using the birefringence phenomenon. Our optical method detects the c-axis direction in 4H-SiC due to its uniaxial optical properties. The system, consisting of a laser, polarizer, gonio stage, and analyzer, is simple and cost-effective. We conducted experiments on both on-axis and off-axis 4H-SiC (0001) samples, presenting angular dependence results around the [1–100] and [11–20] rotations. Despite the need for consideration of light incident angles, the performance was comparable to Rutherford backscattering spectrometry. These findings suggest the potential application of our system in channeling implantation to the c-axis of 4H-SiC.