A 0.11pJ/bit read energy embedded NanoBridge non-volatile memory and its integration in a 28 nm 32 bit RISC-V microcontroller units
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Published:2024-01-19
Issue:2
Volume:63
Page:02SP59
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Bai Xu,Nebashi Ryusuke,Miyamura Makoto,Funahashi Kazunori,Okamoto Koichiro,Numata Hideaki,Iguchi Noriyuki,Sakamoto Toshitsugu,Tada Munehiro
Abstract
Abstract
A 28 nm 512 Kb NanoBridge (NB) non-volatile memory is developed for an energy-efficient microcontroller unit. 0.11 pJ/bit read energy is achieved by utilizing an inverter sense scheme thanks to large ON/OFF conductance ratio of a split-electrode NB. The read energy is 71% and 54% less than those of a ReRAM and a silicon oxide nitride oxide silicon commercial embedded NOR flash at the same technology node, respectively. Moreover, a 28 nm 32 bit RISC-V microcontroller unit embedded with a 2 Mb NB non-voltage memory is fabricated and achieves 80 MHz operation frequency.
Subject
General Physics and Astronomy,General Engineering
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