Author:
Takenaka Kosuke,Yoshitani Tomoki,Endo Masashi,Hirayama Hiroyuki,Toko Susumu,Uchida Giichiro,Ebe Akinori,Setsuhara Yuichi
Abstract
Abstract
The homogeneous formation of high-mobility oxide semiconductor thin films over large areas at low temperatures was accomplished by optimizing both the film formation process and the low-temperature post-processing via plasma annealing. Increasing the substrate-to-target distance (D
ST) and the applied target voltage was found to produce more uniform deposition. The results of the field-effect mobility distributions of IGZO TFTs processed using plasma annealing were founded that plasma annealing generated essentially uniform distributions with μ
FE values in the range of 32–35 cm2 V−1 s−1.
Subject
General Physics and Astronomy,General Engineering