In situ observation of formation of Si protrusions by local melting of a Si narrow current path using resistive heating together with electron beam irradiation

Abstract

Abstract Silicon (Si) protrusions were grown by local surface melting and resolidified on a Si(111) fragment with a narrow current path that was fabricated using a microgrinder at the center of the fragment. The narrow path was resistively heated by passing a current through it until it burned. The surface of the narrow path and fragment gradually melted with increasing current, and the melted Si started to flow from the narrow path to its sides owing to the surface tension of the melted Si. When the fragment surface near the path was locally irradiated with an electron-beam, melted Si accumulated in the irradiation region, resulting in Si protrusions of ∼600 μm in height. The formation mechanism of the Si protrusion was discussed based on in situ optical microscope observations up to the burn-out of the Si narrow path.