Investigation of interface state density near conduction band edge of 4H-SiC MOSFET based on inversion capacitance and drain-current characteristics
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab6864/pdf
Reference32 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. Current SiC technology for power electronic devices beyond Si
3. SiC power-switching devices-the second electronics revolution?
4. Material science and device physics in SiC technology for high-voltage power devices
5. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantization Effect in N-Channel Inversion Mode Si, In0.53Ga0.47As and Ge Based Double Gate MOSFET Using Quasi-Static Capacitance–Voltage Characteristics for Upcoming Sub 10 nm Technology Node;Silicon;2024-03-01
2. Electrically Active Defects in SiC Power MOSFETs;Energies;2023-02-10
3. Analysis of Floating Limiting Rings Termination Under Repetitive Avalanche Current Stress for 4H-SiC JBS Rectifiers;IEEE Transactions on Device and Materials Reliability;2021-09
4. Electrical characterization of SiC MOS capacitors: A critical review;Microelectronics Reliability;2020-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3