Morphological control of nanostructured Ge films in high Ar-gas-pressure plasma sputtering process for Li ion batteries

Author:

Hayashi Junki,Nagai Kenta,Habu Yuma,Ikebe Yumiko,Hiramatsu Mineo,Narishige Ryota,Itagaki Naho,Shiratani MasaharuORCID,Setsuhara Yuichi,Uchida Giichiro

Abstract

Abstract We present a study on morphological control of nanostructured Ge films by the Ar gas pressure in plasma sputtering deposition. In the low Ar-gas-pressure range, aggregated islands of amorphous grains are formed on the film surface, while in the high-pressure range of 500 mTorr monodisperse nano-grains of about 30 nm in size are orderly arranged without aggregation. The film porosity shows a high value of over 10%. We tested the charge/discharge cycle performance of Li-ion batteries with nanostructured Ge films as anodes. The battery cell with an ordered arrangement structure maintained a high capacity of 434 mAh g−1 after 40 charge/discharge cycles, while that with an aggregated structure exhibited a rapid degradation of capacity to 5.08–183 mAh g−1. An ordered arrangement of Ge nano-grains with a high porosity, which is realized in a simple one-step procedure using high Ar-gas-pressure plasma sputtering, is effective for the stable cycling of high-capacity metal anodes.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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