Device structure and fabrication process for silicon spin qubit realizing process-variation-robust SWAP gate operation

Abstract

Abstract In this study, we propose technologies for the device structure, gate fabrication process, and back-bias-assisted operation of Si spin qubits to realize the high robustness of the two-qubit SWAP gate operation against process variations. We performed quantum device simulations for MOS-type two-qubit devices and verified the benefits of these technologies on the SWAP gate fidelity. We clarified that these technologies significantly improve the robustness of the SWAP gate operation against process variations and achieve a 6σ-yield SWAP gate operation with 99% fidelity, assuming device size fluctuation of the International Roadmap for Devices and Systems (IRDS) target for 2022. The proposed technologies provide a solution for completing a universal quantum gate set for realizing universal quantum computers with silicon.