Monte Carlo characterization of Si ring modulator PAM-4 eye diagram performance

Abstract

Abstract The eye diagram performance of the Si ring modulator (RM) is Monte Carlo characterized with the RM equivalent circuit model. Inter-die statistical distributions of Si-RM model parameters are determined from simple RM optical transmission and electrical reflection coefficient measurement, and the correlated model parameter sets are randomly generated for Monte Carlo simulation of 40-Gbps 4-level pulse AM (PAM-4) eye diagrams within simulation program with IC emphasis. From the resulting Monte Carlo simulated eye diagrams, the yield for the Si RMs that satisfy optical modulation amplitude and the ratio of level mismatch requirements can be corroborated with measurement. With these, the eye diagrams of Si electronic-photonic integrated PAM-4 transmitters with RMs and driver electronics are Monte Carlo characterized. This approach allows the extension of the standard Si IC characterization technique to the electronic-photonic ICs and can produce better-performing solutions with better yields in the design stage.