Author:
Yoshida Tomoya,Atsumi Yuki,Omoda Emiko,Sakakibara Youichi
Abstract
Abstract
To obtain high device fabrication uniformity and reproducibility for vertically curved silicon waveguide optical coupler, we developed the high accuracy ion implantation bending (IIB) method by incorporating a tungsten mask that can partially shield the ion implantation. The developed IIB method improved the positional accuracy of the origin of vertically curved Si wire bending from a wet etching-level of 1 μm order to a dry etching-level of several 100 nm order, and we obtained a fabrication accuracy of about less than ±0.4 μm of the tip position of the Si-wire vertically curved structures.
Funder
Japan Society for the Promotion of Science
Strategic Information and Communications R&D Promotion Program
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
4 articles.
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