ReS2 based high-k dielectric stack charge-trapping and synaptic memory

Abstract

Abstract The coming information era has brought about a data explosion which requires smaller and smarter memory devices. In this paper, a ReS2 based high-k dielectric stack (Al2O3/ZrO2/Al2O3) memory was fabricated as a potential candidate for future storage and computing. The device exhibits preeminent electrical characteristics, such as high On/Off current ratio (over 106 ), large memory window (4 V at a 5 V sweep voltage), fast programming and erasing speed plus excellent retention ability. Besides, our devices beautifully emulated the short/long-term potentiation/depression behavior, which shows the good synaptic properties of our device. These excellent storage and synaptic properties are promising for a wide range of applications for our memory device in the future.