Abstract
Abstract
The chemical vapor transport method was used in this research to synthesize MoS2 bulk. Through mechanical exfoliation, we limited the thickness of MoS2 flakes from 1 to 3 μm. In order to fabricate a p–n homogeneous junction, we used oxygen plasma treatment to transform the MoS2 characteristics from n-type to p-type to fabricate a p–n homogenous junction and demonstrate the charge neutrality point shift from −80 to +102 V successfully using FET measurement. The MoS2 p–n homogeneous junction diode showed an excellent p-n characteristic curve during the measurements and performed great rectifying behavior with 1–10 Vpp in the half-wave rectification experiment. This work demonstrated that MoS2 flake had great potential for p-n diodes that feature significant p–n characteristics and rectifying behavior.
Funder
Kyushu Institute of Technology
National Taiwan University of Science and Technology
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
1 articles.
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