Dominant scattering mechanism in SiC MOSFET: comparative study of the universal mobility and the theoretically calculated channel mobility
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab755a/pdf
Reference37 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs
3. High-Mobility SiC MOSFETs with Chemically Modified Interfaces
4. Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
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1. The effect of biaxial strain on the phonon-limited mobility in 4H-SiC MOSFETs;Applied Physics Express;2023-08-01
2. Improvement of electron mobility mediated by interface roughness scattering in pseudomorphic GaAs/In0.15Ga0.85As asymmetric double quantum well structure;Materials Today: Proceedings;2023-06
3. Atomic scale localization of Kohn–Sham wavefunction at SiO2/4H–SiC interface under electric field, deviating from envelope function by effective mass approximation;Applied Physics Letters;2023-05-29
4. Quasisaturation Effect and Optimization for 4H-SiC Trench MOSFET With P+ Shielding Region;IEEE Transactions on Electron Devices;2021-09
5. Scattering mechanisms in β-Ga2O3 junctionless SOI MOSFET: Investigation of electron mobility and short channel effects;Materials Today Communications;2021-03
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