Tunneling magnetoresistance effect with controlled spin polarization based on Mn3ZnN

Abstract

Abstract Due to their groundbreaking advantages, antiferromagnetics offer superior prospects for next-generation memory devices. However, detecting their Néel vector poses great challenges. Mn3ZnN, an antiperovskite antiferromagnetic, breaks TPτ and Uτ symmetries, exhibiting k -resolved spin polarization at the Fermi surface. It is ideal for generation of the tunneling magnetoresistance (TMR) effect by electrodes, which hinges on electrode–barrier compatibility. Testing various insulators, we obtained 2000% TMR effects in Mn3ZnN/SrTiO3/Mn3ZnN. Additionally, the application of 2% biaxial stress increased the spin polarization to 35.24% in Mn3ZnN, hinting at the potential for higher TMR. These findings provide valuable insights for experimental and industrial developments in the field of spintronics.