Abstract
Abstract
Negatively charged boron vacancy (V
B
–) in hexagonal boron nitride has attracted attention as a promising spin defect for quantum sensing applications. Hence, a fabrication method for generation of V
B
– with superior spin properties would be desirable. In this study, we demonstrated V
B
– formation by two thermal treatment methods. Both methods improve the signal-to-noise ratio of optically detected magnetic resonance signal by a factor of 4. Furthermore, a zero-field splitting parameter E which reflects crystal distortion after irradiation significantly reduces for irradiation above 650 °C. These findings indicate that thermal treatment is an effective method for a V
B
– based quantum sensor.
Subject
General Physics and Astronomy,General Engineering
Cited by
2 articles.
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