Reliability enhancement in dipole-doped metal oxide semiconductor capacitor induced by low-temperature and high-pressure nitridation

Abstract

Abstract In this work, low-temperature (100 °C–200 °C) and high-pressure (LTHP) nitridation treatment was applied to improve the performance and reliability of dipole-doped metal oxide semiconductor capacitor. After the LTHP nitridation, the gate leakage and the capacitance of the dipole sample demonstrated obvious enhancements. Furthermore, the degradation of positive bias stress (PBS) and time dependent dielectric breakdown on these LTHP-treated devices apparently decrease. The LTHP was confirmed to effectively enhance the performance and the endurance of the dipole sample. Finally, the mechanism of LTHP nitridation treatment was established to explain the improvements in dipole samples.