Author:
Zhang Ding-Guo,Gao Xu,Tang Wei,Zhong Ya-Nan,Xu Jian-Long,Wang Sui-Dong
Abstract
Abstract
A type of ferroelectric polymer thin-film memristors is demonstrated to show their potential in the emulation of synaptic plasticity. The memristive characteristics of the device arise from the design of asymmetric top electrodes capacitively coupled with a floating bottom electrode, which enables the local modulation of ferroelectric polarization in the ferroelectric terpolymer film. Basic synaptic functions, such as continuous increase/decrease in synaptic weight and paired-pulse facilitation, are successfully emulated using the ferroelectric polymer memristors. This work provides a promising approach to implementing ferroelectric mechanisms in electronic synapses.
Funder
Collaborative Innovation Center of Suzhou Nano Science and Technology
Shanghai Science and Technology Innovation Action Plan
Suzhou Key Laboratory of Functional Nano & Soft Materials
“111” Project
Joint International Research Laboratory of Carbon-Based Functional Materials and Devices
National Key R&D Program of China
National Natural Science Foundation of China
Natural Science Foundation of Jiangsu Higher Education Institutions of China
The "Qinglan Project" of Jiangsu Province
Subject
General Physics and Astronomy,General Engineering
Cited by
2 articles.
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