Abstract
Abstract
We have found microgrooves on the (001) β-Ga2O3 epitaxial deposited by halide vapor-phase epitaxy in Schottky barrier diodes to be killer defects at the point of reverse leakage-current flow [−10.0 μA at −64 V]. The microgrooves tended to align in the [010] direction and each microgroove consisted of (100), (001), and (
1
̅
02) low-index microfacets. The microgrooves were accompanied by polycrystalline defects on the [
1
̅
00] side. The electric field at the bottom of the microgrooves reached 5.27 × 105 V cm−1 at
−
50 V, which is approximately twice that of the flat surface.
Funder
Japan Society for the Promotion of Science