Abstract
Abstract
RT spin injection and optical polarization in nitride-based spin-LEDs are investigated. By employing CoFeB/MgO as the spin injector, the spin relaxation time and diffusion length in n-type GaN film are revealed to be 54.9 ps and 214.4 nm, respectively, through the three-terminal Hanle measurement. As the spin injector structure is applied to blue spin-LED, a maximal circular polarization of 3.3% is detected in electroluminescence, with the surface-emitting geometry and under a vertical magnetic field. UV spin-LED with n-Al0.05Ga0.95N transport layer is also fabricated, whose optical polarization is relatively smaller due to the larger spin–orbit coupling in Al atoms.
Funder
Fundamental Research Funds for the Central Universities
National Key Research and Development Program of China
National Science Fund for Excellent Young Scholars
National Natural Science Foundation of China
Science and Technology Project of Fujian Province of China
Subject
General Physics and Astronomy,General Engineering
Cited by
8 articles.
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