Abstract
Abstract
A metal/ferroelectric (FE)-HfO2/IGZO/metal capacitor was fabricated and investigated for 3D high-density memory application. The sharp interface is obtained without atomic interdiffusion. The capacitor shows ferroelectricity with a IGZO capping layer. The endurance and retention measurement show that the capacitor has up to 108 program/erase endurance cycles and a 10 year retention, respectively. The capacitor does not show the wake-up effect, which is beneficial for circuit design and manufacturing. The asymmetric imprint effect is attributed to the different band modulation in the accumulation and depletion states of IGZO.
Subject
General Physics and Astronomy,General Engineering
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