Abstract
Abstract
We demonstrate a hybrid Si photodetector structure by employing an additional layer of fluorescent carbon quantum dot (CQD) nanoparticles constructed on the surface of a Si positive-intrinsic-negative (PIN) photodetector. The experimental studies reveal that the optimized hybrid device can efficiently enhance short-wavelength range responsibility between 300 nm to 600 nm without inducing any deteriorated photodetection performance beyond the short-wavelength region, and thereby achieve broadband sensitivity across the UV–vis-NIR spectra region. The measured photoresponsivity of the optimized device can achieve ∼0.088 A W−1 (@500 nm), which was ∼25% higher than that of a commercial blank PIN Si photodetector.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangsu Province
Subject
General Physics and Astronomy,General Engineering
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献