Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistors-Reference-Cited by-同舟云学术

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Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistors

Published:2020-05-15 Issue:6 Volume:13 Page:065006
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Gao Yanlin^ORCID,Maruyama Mina^ORCID,Okada Susumu^ORCID

Funder

Japan Society for the Promotion of Science

Kyoto University

Core Research for Evolutional Science and Technology

University of Tsukuba

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ab88c4/pdf

Reference53 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. Heteroepitaxial graphite on6H−SiC(0001): Interface formation through conduction-band electronic structure

4. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

5. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

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2. Energetics and electronic structure of bilayer Janus WSSe;Applied Physics Express;2023-07-01

3. Electronic structure of graphene thin films under a perpendicular electric field;Japanese Journal of Applied Physics;2023-07-01

4. Energy Relaxation and Cooling in Impure Bilayer Graphene at Low Temperatures;physica status solidi (b);2022-08-30

5. Umbrella Sampling Simulations of Carbon Nanoparticles Crossing Immiscible Solvents;Molecules;2022-01-31

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