Abstract
Abstract
One-dimensional tellurides Ta4SiTe4 and Nb4SiTe4 were found to show high thermoelectric performance below room temperature. This study reported the synthesis and thermoelectric properties of Ta4SiTe4-Nb4SiTe4 solid solutions and Mo- or Ti-doped (Ta0.5Nb0.5)4SiTe4. Thermoelectric power of the solid solutions systematically increased with increasing Ta content, while their electrical resistivity was unexpectedly small. Mo- and Ti-doped (Ta0.5Nb0.5)4SiTe4 showed n- and p-type thermoelectric properties with large power factors exceeding 40 μW cm−1 K−2, respectively. The fact that not only Ta4SiTe4 and Nb4SiTe4 but also their solid solutions showed high performance indicated that this system is a promising candidate for thermoelectric applications at low temperatures.
Funder
the Asahi Glass Formation
the Research Foundation for the Electrotechnology of Chubu
the Inamori Foundation
Japan Society for the Promotion of Science
Subject
General Physics and Astronomy,General Engineering
Cited by
4 articles.
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