Depletion effects in moderately doped TiO2 layers from C–V characteristics of MIS structures on Si

Abstract

Abstract This letter investigates the large spread of values of capacitance measured in Si/TiO2 MIS structures for different properties of the TiO2 layer and proposes an approach to understand the behavior of the system. Experimental results show large variations of the maximum capacitance with TiO2 thickness for the as-deposited structures and further highlight the change of trend after annealing. Simulations qualitatively depict the theoretical trends explaining the C–V characteristics to the first order, by the different behaviors of the oxide layer in the structure and the distribution of the majority carriers showing depletion effects.