Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers-Reference-Cited by-同舟云学术

Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers

Published:2020-03-31 Issue:4 Volume:13 Page:045504
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Tanaka Shunya^ORCID,Kawase Yuta,Teramura Shohei,Iwayama Sho,Sato Kosuke^ORCID,Yasue Shinji,Omori Tomoya,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu,Miyake Hideto

Funder

JST CREST

JSPS KAKENHI

the MEXT Private University Research Branding Project

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ab7caf/pdf

Reference54 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer

3. High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer

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