Intensive light soaking improves electricity generation of silicon heterojunction solar cells by the anomalous Staebler–Wronski effect

Abstract

Abstract Silicon heterojunction (SHJ) solar cells are usually considered to be a good choice for power plants owing to their high power-conversion efficiency. A recent work reports light soaking can activate boron doping in hydrogenated amorphous silicon (a-Si:H), improving the efficiency of SHJ solar cells. Here we further show high light intensity can boost the dark conductivity of the phosphorus-doped a-Si:H and the boron-doped a-Si:H, this has significant implications, i.e., SHJ panels can generate more power than expected, especially for bifacial SHJ solar panels illuminated by intensive light soaking. In this regard, SHJ solar cells exhibit advantages in concentrator photovoltaic applications.