Author:
He Zhijian,Zou Daifeng,Yang Qiong,Duan Tianpeng,Tan Yingjun,Lei Chihou,Xie Shuhong,Liu Yunya
Abstract
Abstract
Fe3Ga/HfO2/Fe3Ga heterojunction possesses reasonable lattice mismatch and good ferroelectric at the nanoscale. However, its magnetoelectric coupling is unexplored. Based on the first-principles calculations, we demonstrate that the magnetoelectric coupling in Fe3Ga/HfO2/Fe3Ga heterojunction is induced by polarization, which is different from the common strain-mediated magnetoelectric effect. The polarization-induced magnetoelectric effect of heterojunction is explained by the analyses of orbital-resolved density of states and spin densities, finding that the interfaces between Fe3Ga and HfO2 play an important role in magnetoelectric coupling, offering an alternative pathway for generating magnetoelectric coupling at room temperature.
Funder
National Natural Science Foundation of China
Science and Technology Innovation Program of Hunan Province
Natural Science Foundation of Hunan Province
Hunan Provincial Innovation Foundation for Postgraduate
Outstanding Youth Science Foundation of Hunan Province
the Dean of Parks College and the Provost of Saint Louis University
Subject
General Physics and Astronomy,General Engineering