Abstract
Abstract
We developed a novel terahertz-wave detector fabricated on a SiC platform implementing an InP/InGaAs Fermi-level managed barrier (FMB) diode. The FMB diode epi-layers were transferred on a SiC substrate, and a waveguide coupler and filters were monolithically integrated with an FMB diode. Then, the fabricated detector chip was assembled in a fundamental mixer module with a WR-3 rectangular-waveguide-input port. It exhibited a minimum noise equivalent power as low as 3 × 10–19 W Hz−1 at around 300 GHz for a local oscillator power of only 30 μW.
Subject
General Physics and Astronomy,General Engineering
Cited by
14 articles.
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