Control of V th of the enhancement high-frequency AlGaN/GaN HEMT fabricated by oxygen-based digital etching
Author:
Funder
Ministry of Science and Technology Taiwan
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ac32a6/pdf
Reference30 articles.
1. AlGaN/GaN HEMT with 300 GHz f max;Chung;IEEE Electron Device Lett.,2010
2. AlGaN/GaN HEMTs on SiC with ft of over 120 GHz;Kumar;IEEE Electron Device Lett.,2002
3. History of GaN: high-power RF gallium nitride (GaN) from infancy to manufacturable process and beyond;Runton;IEEE Microwave Mag.,2013
4. GaN DHFETs having 48% power added efficiency and 57% drain efficiency at V-band;Micovic;IEEE Electron Device Lett.,2017
5. AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2V−1 s−1);Yamamoto;Jpn. J. Appl. Phys.,2018
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Control of Surface Chemistry in Recess Etching toward Normally Off GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors;physica status solidi (RRL) – Rapid Research Letters;2024-04-29
2. Novel Stacked Passivation Structure for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit;IEEE Journal of the Electron Devices Society;2023
3. Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer;ECS Journal of Solid State Science and Technology;2022-08-01
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