Author:
Matsumura Shotaro,Ogasahara Iori,Miyake Masafumi,Osaka Taito,Toh Daisetsu,Yamada Jumpei,Yabashi Makina,Yamauchi Kazuto,Sano Yasuhisa
Abstract
Abstract
We developed a new etching technique using plasma generated at high pressure up to 9 atm. Operating at 9-atm pressure with a 30-μm-diameter wire electrode, we demonstrated the generation of well-ordered plasma at a narrow gap of ∼10 μm between the electrode and workpiece, and realized a high spatial resolution of <40 μm during processing. This technique should allow for the processing of high-precision X-ray crystal optical devices with compact and complex structures, such as a micro channel-cut crystal monochromator with an extremely narrow (sub-100 μm width) groove for realization of Fourier-transform-limited X-ray lasers with high intensity.
Funder
Japan Society for the Promotion of Science
Subject
General Physics and Astronomy,General Engineering