Graphene films grown by chemical vapor deposition and their applications

Author:

Vinokurov P. V.1ORCID,Popov V. I.2,Nikolaev D. V.1ORCID,Smagulova S. A.1ORCID

Affiliation:

1. Ammosov North-Eastern Federal University

2. Shafer Institute of Cosmophysical Research and Aeronomy SB RAS

Abstract

In this article we provide the results of the synthesis of graphene films and discuss their potential applications in electronic structures. Graphene films were synthesized on copper foil using the CVD method at 1050 °C. During the initial stage of synthesis, graphene domains with hexagonal shapes and an average size of 10 μm were formed. The orientation and size of the graphene domains are based on the synthesis parameters and the copper foil. As the synthesis time increases, domain cross-linking occurs, resulting in polycrystalline continuous graphene film formation. Graphene films have areas up to 100 cm2 and thicknesses ~ 1 nm to 5 nm. To measure the Raman spectra, graphene films were transferred to SiO2/Si substrates. Graphene films exhibit an intense 2D peak that significantly exceeds the G peak of crystalline graphite. Flexible transparent conductive touch panels were created on the basis of the grown graphene films. A lamination method has been used to create graphene films that can be transferred from copper foil to polymer substrates. A laboratory touch screen with a graphene film acting as a capacitive touch sensor was constructed on the basis of the transferred film, and transparent electrodes for molybdenum disulfide-based photosensitive elements were also created. Resistive humidity sensors based on graphene films were developed and transferred to SiO2/Si and epoxy/Si substrates. The graphene humidity sensor has a low response, high temperature stability, and is highly reliable.

Publisher

Academy of Sciences of the Republic of Sakha (Yakutia)

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