Improving the thermal properties of the device in the process of forming a contact with the collector region of a silicon transistor

Abstract

Objective. The objective of the study is to increase the reliability of the contact of the semiconductor transistor crystal to the body and the reproducibility of the technological process.Method. A method for obtaining multilayer metallization of the reverse side of the crystal has been developed and the most optimal technological modes of its formation have been selected. The parameters of the reliability of the connection of the crystal to the body of the transistor were checked.Results. Layer-by-layer metallization has been obtained, which provides a strong contact to the collector region of the transistor and a reliable fit of the crystal to the base of the case.The control of technological operations showed 100% distribution of solder over the surface of the crystal, the absence of pores in the solder, the improvement in the output characteristics of the device and the increase in the percentage of output usable transistors.Conclusion. An analysis of the experimental results showed that in order to create a reliable contact and remove heat from the collector junction of power semiconductor transistors on the reverse side of the plates, it is necessary to form a metallization in one technological cycle, consisting of four layers of metals (Cr-Ni-Sn-Ag). The technical result of the research is to improve the quality of fit by obtaining a uniform distribution of the layer of Cr-Ni-Sn-Ag metals in a single technological cycle.