DC PLANAR MAGNETRON SPUTTER DEPOSITION OF BORON THIN FILMS AND THEIR PROPERTIES
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Published:2023
Issue:2
Volume:27
Page:51-56
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ISSN:1093-3611
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Container-title:High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes
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language:en
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Short-container-title:High Temp Mat Proc
Author:
Nikolaev Alexey G.,Gushenets V. I.,Bugaev A. S.,Oks E. M.,Vizir A. V.,Yushkov G. Yu.
Abstract
In this study, boron thin films were deposited on metal substrates using planar direct current (DC) magnetron sputtering with a pure boron target. Boron has high electrical resistance, severely impeding its application in a magnetron discharge; however, it is a semiconductor and its resistance decreases as the temperature increases. We used a planar magnetron with a boron target that was heated in a DC discharge current up to 50 mA in argon and nitrogen at a pressure of 2-3 mTorr. For these discharge parameters, at a distance of 5 cm from the target the boron deposition rate was about 150 nm/h. Thin boron films with thickness up to 1 μm were obtained and their surface morphology was studied. The deposition technique and the properties of the films are discussed.
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