Heavy Metal Gettering by an Intrinsic Gettering Technique Using Microdefects in Czochralski-Grown Silicon Wafers

Author:

Kishino Seigô,Nagasawa Kazutoshi,Iizuka Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Investigation on the Transformation of B-Defect in As-Grown Czochralski Silicon Crystal during Annealing Process;ECS Journal of Solid State Science and Technology;2022-02-01

2. Back-thinned CMOS sensor optimization;SPIE Proceedings;2010-02-11

3. Generation lifetime improvement on MOS capacitor by fast neutron enhanced intrinsic gettering technique;Microelectronics Journal;2003-02

4. Impurity Gettering;Encyclopedia of Materials: Science and Technology;2001

5. A Comprehensive Model for the Gettering of Lifetime-Killing Impurities in Silicon;Journal of The Electrochemical Society;2000

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