Iron Nanowire Formation in Si(110)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference22 articles.
1. Epitaxial growth of Fe3Si/GaAs(001) hybrid structures
2. Antisymmetric contribution to the planar Hall effect ofFe3Sifilms grown onGaAs(113)Asubstrates
3. A spin metal–oxide–semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain
4. Room-temperature epitaxial growth of ferromagnetic Fe3Si films on Si(111) by facing target direct-current sputtering
5. Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate
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1. Lattice dynamics and polarization-dependent phonon damping in α -phase FeSi2 nanostructures;Physical Review B;2020-04-06
2. Growth and motion of liquid alloy droplets of Au on Ge(1 1 0);Ultramicroscopy;2017-12
3. Unidirectional endotaxial cobalt di-silicide nanowires on Si(110) substrates;Nanotechnology;2017-09-25
4. In situ resistivity of endotaxial FeSi2 nanowires on Si(110);Journal of Applied Physics;2015-09-28
5. Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin;Applied Physics Letters;2014-11-10
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